LDTBG12GPLT3G - Bias Resistor Transistor

Product Overview

Leshan Radio Company

Part number	LDTBG12GPLT3G
Manufacturer	Leshan Radio Company
File Size	321.69 KB
Description	Bias Resistor Transistor
Datasheet	LDTBG12GPLT3G Datasheet
Note	This datasheet PDF includes multiple part numbers: LDTBG12GPLT3G, LDTBG12GPLT1G. Please refer to the document for exact specifications by model.
Additional preview pages of the LDTBG12GPLT3G datasheet.

1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

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Published: Aug 25, 2015 |