LDTC144TET1G
Key Features
- Only the on/off conditions need to be set for operation, making the device design easy
- We declare that the material of product pliance with RoHS requirements
- Emitter cutoff current IEBO
- Collector-emitter saturation voltage VCE(sat)
- DC current transfer ratio hFE 100 Input resistance R1 32.9 Transition frequency Characteristics of built-in transistor fT ∗
- 250 47 250 Max
- 0.5 0.5 0.3 600 61.1 - Unit V V V µA µA V
- T- SEATING PLANE NOTES
- DIMENSIONING AND TOLERANCING PER ANSI Y14.5M
- 2. CONTROLLING DIMENSION: MILLIMETERS
