Leshan Radio Company LMBT2222AWT1G
General Purpose Transistor
| Part No. | LMBT2222AWT1G |
|---|---|
| Datasheet | LMBT2222AWT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistor |
| Buy | Stock & Price |
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT2222AWT1G S-LMBT2222AWT1G 3 1MAXIMUM RATINGS
Rating Symbol Value Unit 2 CASE 419–02, STYLE 3 SOT–323 /SC – 70 Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO V CBO V EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 40 Vdc 75 Vdc 6.0 Vdc 600 mAdc Symbol PD RθJA TJ , Tstg Max 150 833 –55 to +150 Unit mW °C/W °C 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT2222AWT1G S-LMBT2222AWT1G = P1ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (I C = 10 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE EB V (BR)CEO V (BR)CBO V (BR)EBO I BL I CEX 40 75 6.0 — — 1.
