Leshan Radio Company LMBT2369ALT1
Switching Transistors
| Part No. | LMBT2369ALT1 |
|---|---|
| Datasheet | LMBT2369ALT1 Download |
| Manufacturer |  Leshan Radio Company |
| Description | Switching Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CES V CBO V EBO Value 15 40 40 4.5 200 Unit Vdc Vdc Vdc Vdc mAdc 1 2 SC-70/SOT–323 IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING LMBT2369LT1 = M1J, LMBT2369ALT1 = 1JAELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 10 mAdc, I B = 0) Collector–Emitter Breakdown Voltage (I C = 10 µAdc, V BE = 0) Collector–Base Breakdown Voltage (I C = 1...
