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LMBT3904DW1T1G - Dual Transistor

Datasheet Summary

Features

  • 1)Low VCE(sat), ≤ 0.4 V 2)Simplifies Circuit Design 3)Reduces Board Space 4)Reduces Component Count 5)Available in 8 mm, 7.
  • inch/3,000 Unit Tape and Reel 6)hFE, 100.
  • 300 7)We declare that the material of product compliant with RoHS requirements and Halogen Free. 8) S- Prefix for Automotive and Other.

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Datasheet Details

Part number LMBT3904DW1T1G
Manufacturer Leshan Radio Company
File Size 397.42 KB
Description Dual Transistor
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium. LMBT3904DW1T1G S-LMBT3904DW1T1G ●FEATURES 1)Low VCE(sat), ≤ 0.4 V 2)Simplifies Circuit Design 3)Reduces Board Space 4)Reduces Component Count 5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 6)hFE, 100–300 7)We declare that the material of product compliant with RoHS requirements and Halogen Free.
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