Leshan Radio Company LMBT3904TT1G
General Purpose NPN Silicon Transistor
| Part No. | LMBT3904TT1G |
|---|---|
| Datasheet | LMBT3904TT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3904TT1G MA 4000/Tape&Reel LMBT3904TT3G MA 10000/Tape&Reel 3.MAXIMUM RATINGS
(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 40 V Collector–Base Voltage VCBO 60 V Emitter–Base Voltage VEBO 6 V Collector Current — Continuous IC 200 mA 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. Symbol Limits Unit PD RΘJA 200 mW 1.6 mW/ºC 600 ºC/W PD 300 mW 2.4 mW/ºC RΘJA 400 ºC/W TJ,Tstg −55∼+150 ºC SC89 1 BASE 3 COLLECTOR 2 EMITTER Leshan Radio Company, LTD. Rev.A Nov. 2022 1/5 LMBT3904TT1G General Purpose Transistors NPN Silicon 5.
