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LMBT3946DW1T1G - Dual Transistor

Features

  • 1)Low VCE(sat), ≤ 0.4 V 2)Simplifies Circuit Design 3)Reduces Board Space 4)Reduces Component Count 5)Available in 8 mm, 7.
  • inch/3,000 Unit Tape and Reel 6)hFE, 100.
  • 300 7)We declare that the material of product compliant with RoHS requirements and Halogen Free. 8)S- Prefix for Automotive and Other.

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Datasheet Details

Part number LMBT3946DW1T1G
Manufacturer Leshan Radio Company
File Size 532.93 KB
Description Dual Transistor
Datasheet download datasheet LMBT3946DW1T1G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Silicon The LMBT3946DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium. LMBT3946DW1T1G S-LMBT3946DW1T1G ●FEATURES 1)Low VCE(sat), ≤ 0.4 V 2)Simplifies Circuit Design 3)Reduces Board Space 4)Reduces Component Count 5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 6)hFE, 100–300 7)We declare that the material of product compliant with RoHS requirements and Halogen Free.
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