LMBT5087LT3G - Low Noise Transistor

This page provides the datasheet information for the LMBT5087LT3G, a member of the LMBT5087LT1G Low Noise Transistor family.

Leshan Radio Company

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Datasheet Details

Part number	LMBT5087LT3G
Manufacturer	Leshan Radio Company
File Size	152.32 KB
Description	Low Noise Transistor
Datasheet	LMBT5087LT3G Datasheet
Additional preview pages of the LMBT5087LT3G datasheet.

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT5087LT1G ORDERING INFORMATION Device Marking Shipping LMBT5087LT1G 2Q 3000/Tape & Reel LMBT5087LT3G 2Q 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous DEVICE MARKING Symbol V CEO V CBO V EBO IC LMBT5087LT1G =2Q THERMAL CHARACTERISTICS Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Value – 50 – 50 – 3.

Published: Aug 10, 2015 |