LMBTA70LT1G - General Purpose Transistors

Leshan Radio Company

Datasheet Details

Part number	LMBTA70LT1G
Manufacturer	Leshan Radio Company
File Size	348.15 KB
Description	General Purpose Transistors
Datasheet	LMBTA70LT1G Datasheet
Additional preview pages of the LMBTA70LT1G datasheet.

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTA70LT1G Device LMBTA70LT1G LMBTA70LT3G Marking M2C M2C Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value –40 –4.0 –100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.

Published: Aug 10, 2015 |