Datasheet Summary
LESHAN RADIO PANY, LTD.
Silicon Hot- Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high- efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low- cost, high- volume consumer and industrial/mercial requirements. They are available in a Surface Mount package.
- Extremely Low Minority Carrier Lifetime
- 15 ps (Typ)
- Very Low Capacitance
- 1.5 pF (Max) @ V R = 15 V
- Low Reverse Leakage
- I R = 13 nAdc (Typ)
- Device Marking: 4T
- We declare that the material of product pliance with RoHS requirements.
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