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LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V • Low Reverse Leakage – I R = 13 nAdc (Typ) • Device Marking: 4T
• We declare that the material of product compliance with RoHS requirements.
LMDL301T1G Datasheet
