Leshan Radio Company LMUN5133DW1T1
the LMUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium.| Part No. | LMUN5133DW1T1 |
|---|---|
| Datasheet | LMUN5133DW1T1 Download |
| Manufacturer |  Leshan Radio Company |
| Description | Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO –50 Vdc Collector-Emitter Voltage V CEO –50 Vdc Collector Current IC –100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1.) mW 256 (Note 2.) T A = 25°C 1.5 (Note 1.) mW/°C Derate above 25°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad R θJA 670 (Note 1.) 490 (Note 2.) °C/W Q2 R2 R1 1 2 R1 R2 Q1 3 MARKING DIAGRAM 6 5 4 XX 1 2 3 xx = Device Marking = (See Page 2) Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) –55 to +150 Unit mW mW/°C °C/W °C/W °C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet.
