Leshan Radio Company LMUN5135DW1T1G
the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium.| Part No. | LMUN5135DW1T1G |
|---|---|
| Datasheet | LMUN5135DW1T1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | Dual Bias Resistor Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO –50 Vdc Collector-Emitter Voltage V CEO –50 Vdc Collector Current IC –100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1.) mW 256 (Note 2.) T A = 25°C 1.5 (Note 1.) mW/°C Derate above 25°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Q1 3 MARKING DIAGRAM 6 5 4 XX 1 2 3 R θJA 670 (Note 1.) 490 (Note 2.) °C/W xx = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) –55 to +150 Unit mW mW/°C °C/W °C/W °C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1.
