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LMUN5230DW1T1G Datasheet PDF

Leshan Radio Company LMUN5230DW1T1G

the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Part No. LMUN5230DW1T1G
Datasheet LMUN5230DW1T1G Download
Manufacturer
Leshan Radio Company
Description Dual Bias ResistorTransistors
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LMUN5230DW1T1G datasheet page 1 preview

MAXIMUM RATINGS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.) Thermal Resistance – R θJA 670 (Note 1.) °C/W Junction-to-Ambient 490 (Note 2.) Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead PD R θJA R θJL 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) Junction and Storage Temperature T J , T stg –55 to +150 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKING DIAGRAM 6 54 7X 1 23 7X = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet.
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