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LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ
LP2305LT1G
3
1 2
SOT– 23 (TO–236AB)
FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ORDERING INFORMATION
D
Device
LP2305LT1G LP2305LT3G
Marking
P05 P05
Shipping
3000/Tape&Reel 10000/Tape&Reel
G S
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
o
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Operating Junction and Storage Temperature Range Total Power Dissipation
Junction-to-Ambient Thermal Resistance (PCB mounted)
2.
LP2305LT1G Datasheet
