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LRB520G-30T1G - SCHOTTKY BARRIER DIODE

Key Features

  • 1) Ultra Small mold type. 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar zD evice M ark ing Device LRB520G-30T1G Marking E Shipping 4000/Tape&Reel LRB520G-30T1 G 1 2 SOD-723 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60Hz1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ zElectrical characteristics (Ta=25°C).

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Datasheet Details

Part number LRB520G-30T1G
Manufacturer Leshan Radio Company
File Size 249.02 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet LRB520G-30T1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. Schottky barrier diode P b - free pack age is available zApplications Low current rectification zFeatures 1) Ultra Small mold type. 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar zD evice M ark ing Device LRB520G-30T1G Marking E Shipping 4000/Tape&Reel LRB520G-30T1 G 1 2 SOD-723 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60Hz1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ zElectrical characteristics (Ta=25°C) Param eter Sym bol Forward voltage Revers e current VF IR Min. - Typ. Max. - 0.45 - 0.5 Unit Conditions V IF=10m A µA VR=10V Rev.