Datasheet4U Logo Datasheet4U.com

LRB520G-30T1G - SCHOTTKY BARRIER DIODE

Key Features

  • 1) Ultra Small mold type. 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar zD evice M ark ing Device LRB520G-30T1G Marking E Shipping 4000/Tape&Reel LRB520G-30T1 G 1 2 SOD-723 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60Hz1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ zElectrical characteristics (Ta=25°C).

📥 Download Datasheet

Datasheet Details

Part number LRB520G-30T1G
Manufacturer Leshan Radio Company
File Size 249.02 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet LRB520G-30T1G Datasheet

Other Datasheets by Leshan Radio Company

Part Number Description
LRB520BS-30T5G SCHOTTKY BARRIER DIODE
LRB520BS-40T5G SCHOTTKY BARRIER DIODE
LRB520CS-30T1G SCHOTTKY BARRIER DIODE
LRB520CS-30T5G SCHOTTKY BARRIER DIODE
LRB520S-30T1 Surface Mount Schotty Diode
LRB520S-30T3G SCHOTTKY BARRIER DIODE
LRB520S-40T1G SCHOTTKY BARRIER DIODE
LRB521CS-30T5G SCHOTTKY BARRIER DIODE
LRB521G-30T1G SCHOTTKY BARRIER DIODE
LRB521S-30T1 Surface Mount Schotty Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. Schottky barrier diode P b - free pack age is available zApplications Low current rectification zFeatures 1) Ultra Small mold type. 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar zD evice M ark ing Device LRB520G-30T1G Marking E Shipping 4000/Tape&Reel LRB520G-30T1 G 1 2 SOD-723 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60Hz1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ zElectrical characteristics (Ta=25°C) Param eter Sym bol Forward voltage Revers e current VF IR Min. - Typ. Max. - 0.45 - 0.5 Unit Conditions V IF=10m A µA VR=10V Rev.