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S-LBAS16WT1G - Switching Diode

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Datasheet Details

Part number S-LBAS16WT1G
Manufacturer Leshan Radio Company
File Size 113.40 KB
Description Switching Diode
Datasheet download datasheet S-LBAS16WT1G Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25oC) Rating Symbol Max Continuous Reverse Voltage VR 75 Recurrent Peak Forward Current IR 200 Peak Forward Surge Current Pulse Width = 10 µs IFM(surge) 500 Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) PD 200 1.