LTC1157 Datasheet | Linear Technology

LTC1157 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver Features s s s s s s s s s DESCRIPTIO Allows Lowest Drop 3.3V Supply Switching Operates on 3.3V or 5V Nominal Supplies 3 Microamps Standby Current 80 Microamps ON Current Drives Low Cost N-Channel Power MOSFETs No External Charge Pump ponents Controlled Switching ON and OFF Times patible with 3.3V and 5V Logic Families Available in 8-Pin SOIC APPLICATI s s s s s s s Notebook puter Power Management Palmtop puter Power Management P-Channel Switch Replacement Battery Charging and Management Mixed 5V and 3.3V Supply Switching Stepper Motor and DC Motor Control Cellular Telephones and Beepers The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low RDS(ON) N-channel switch (N-channel switches are required at 3.3V because Pchannel MOSFETs do not have guaranteed RDS(ON) with VGS ≤ 3.3V). The LTC1157 internal charge pump boosts the gate drive voltage 5.4V above the positive rail (8.7V above ground), fully enhancing a logic level N-channel switch for 3.3V high-side applications and a standard Nchannel switch for 3.3V low-side applications. The gate drive voltage at 5V is typically 8.8V above supply (13.8V above ground), so standard N-channel MOSFET switches can be used for both high-side and low-side applications. Micropower operation, with 3µA standby current and 80µA operating current, makes the LTC1157 well suited for battery-powered applications. The LTC1157 is available in both 8-pin DIP and SOIC. TYPICAL APPLICATI Ultra Low Voltage Drop 3.3V Dual High-Side Switch 3.3V GATE VOLTAGE - SUPPLY VOLTAGE (V) + 10 8 6 4 2 0 2.0 2.5 10µF VS 3.3V LOGIC IN1 LTC1157 IN2 GND G2 G1 (8.7V) (8.7V) IRLR024 IRLR024 3.3V LOAD 3.3V LOAD - TA01 Gate Voltage Above Supply 3.0 3.5 4.0 4.5 5.0 5.5 SUPPLY VOLTAGE (V) 6.0 - TA02 LTC1157 ABSOLUTE AXI U RATI GS Operating Temperature Range...