Datasheet Summary
GaAlAs T-1 Standard 3 Infrared Emitting Diode
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C
Features
Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes.
Package Dimensions
Description
The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-4206 series provides a broad range of intensity selection. Suffix C-smoke color lens.
Notes: 1. All dimensions are in...