Download the T1M3F-A datasheet PDF.
This datasheet also covers the T1M3F-A-Lite variant, as both devices belong to the same sillicon bidirectional thyristors family and are provided as variant models within a single manufacturer datasheet.
Key Features
One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110℃) High Surge Current of 10 Amps Pb-Free Package
T1M3F-A SERIES
TRIACs 1.0.
Full PDF Text Transcription for T1M3F-A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
T1M3F-A. For precise diagrams, and layout, please refer to the original PDF.
LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Tr...
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jection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110℃) High Surge Current of 10 Amps Pb-Free Package T1M3F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA) TO-92 DIM. MIN. MAX. A 4.45 4.70 B 4.32 5.33 C 3.18 4.19 D 1.15 1.39 E 2.42 2.66 F 12.7 ------ G 2.04 2.66 I 3.
T1M3F-A Datasheet
