Datasheet4U Logo Datasheet4U.com

1N5645A - Silicon Avalanche Diodes

Key Features

  • Hermetically sealed.
  • Breakdown voltage range 6.8 - 200 volts.
  • Glass passivated junction.
  • Excellent clamping capability.
  • Low zener impedance.
  • 100% surge tested.
  • -55°C to +150°C.
  • Uni-polar ® 6.

📥 Download Datasheet

Full PDF Text Transcription for 1N5645A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1N5645A. For precise diagrams, and layout, please refer to the original PDF.

Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts •...

View more extracted text
URES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance •100% surge tested •-55°C to +150°C •Uni-polar ® 6 SILICON DIODE ARRAYS Min 31.8 Max 5.33 7.5 9.0 Min 25.4 Max 0.8 5.58 MAXIMUM RATING •Peak Pulse Power (Ppk): 1500 Watts (10 x 1000µs)@25°C (see diagram on page 3 for wave form) •1 watt steady state •Response time: 1 x 10-12 seconds (theoretical) •Operating & storage temperature: -55°C to +150°C MECHANICAL CHARACTERISTICS •Case: Metal hermetically sealed DO-13 package •Terminals: Axial leads, solderable per MIL-STD-202 Method