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CPC3981Z - N-Channel MOSFET

General Description

The CPC3981Z is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) in a modified SOT-223 package to provide greater separation of the drain and source leads for high voltage applications.

Key Features

  • & Benefits.
  • 800V breakdown voltage.
  • 45Ω on-resistance.
  • VGS(off): -1.4V to -3.1V.
  • TJ(max): 150°C.
  • High input impedance.

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CPC3981Z 800V, 45Ω N-Channel MOSFET Key Attributes Characteristic V(BR)DSX TJ RDS(on) IDSS Rating 800 150 45 100 Unit V °C Ω mA Pinout Diagram (SOT-223-2L) D G S D 4 1 3 G S G: Gate; D: Drain; S: Source MOSFET Datasheet Description The CPC3981Z is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) in a modified SOT-223 package to provide greater separation of the drain and source leads for high voltage applications. The CPC3981Z's robust MOSFET has been used extensively in Littelfuse Integrated Circuits’ Solid State Relays in power, industrial, and telecommunications applications. The CPC3981Z is available in the SOT-223-2L package. Features & Benefits  800V breakdown voltage  45Ω on-resistance  VGS(off): -1.4V to -3.