G Bi-directional G Glass passivated junction G High-surge capabilities G Low capacitance G Operation & storage temperature -55°C to 175°C
9.1/ 9.5 10.1/10.3
4.9/ 5.1.
CR1100SA- The CR range of protectors are based on the proven technology of the T10 thyristor product
CR1100SB- The CR range of protectors are based on the proven technology of the T10 thyristor product
CR1100SC- The CR range of protectors are based on the proven technology of the T10 thyristor product
CR1500SA- The CR range of protectors are based on the proven technology of the T10 thyristor product
CR1500SB- The CR range of protectors are based on the proven technology of the T10 thyristor product
CR1500SC- The CR range of protectors are based on the proven technology of the T10 thyristor product
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TO - 220 series SiBOD™
FEATURES
G Bi-directional G Glass passivated junction G High-surge capabilities G Low capacitance G Operation & storage temperature -55°C to 175°C
9.1/ 9.5 10.1/10.3
4.9/ 5.1
MECHANICAL CHARACTERISTICS
G Modified TO-220 Outline G Terminals: Solderable to MIL-STD-202 Method 208 G Weight 1.4 grammes (approx)
3.5 15.25/ 15.65
NOTES
0.8
(i) VBR IS MEASURED @ 1mA USING A PULSE OF 20mSEC OR LESS
5.08
2.54
0.46/ 0.61
(ii)
PEAK PULSE CURRENT (A) 10 / 1000µS WAVE SHAPE 10 / 560µS WAVE SHAPE 10 / 160µS WAVE SHAPE
TYPE AA 50.0 100.0
TYPE AB 100.0 150.0
TYPE AC 100.0 200.0
(iii) ALL TESTING PERFORMED @ 25°C
EQUIVALENT CIRCUIT
CR XXX 2 XX SERIES CR XXX 3 XX SERIES
TIP (A)
GND
RING (B)
TIP (A)
GND
RING (B)
w w w. l i t t e l f u s e .