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IXFN44N100P
1000 V, 220 mΩ PolarTM HiperFETTM Power MOSFET
MOSFET Datasheet
Pinout Diagram (SOT-227B)
baseplate D
D
G
G
S*
S*
S
S
Features:
■ International Standard Package ■ Low Intrinsic Gate Resistance ■ miniBLOC with Aluminum
Nitride Isolation
■ Low Package Inductance ■ Fast Intrinsic Rectifier ■ Low RDS(on) and QG
Advantages:
■ High Power Density ■ Easy to Mount
■ Space Savings
Applications:
■ DC-DC Converters ■ Battery Chargers ■ Switch-Mode and Resonant-
Mode Power Supplies
■ AC Motor Control ■ High Speed Power
Switching Application
Product Summary
Characteristic VDSS ID25 RDS(on) trr
Value 1000
37 ≤ 220 ≤ 300
Unit V A
mΩ ns
G: Gate; D: Drain; S: Source; baseplate: Isolated * Either Source terminal can be used as main or Kelvin Source
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