LFUSCD20120B Overview
The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
LFUSCD20120B Key Features
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Enhanced surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses pared to Si bipolar diodes
LFUSCD20120B Applications
- Positive temperature coefficient for safe operation and ease of paralleling