LSIC2SD065A08A
Description
This series of silicon carbide (Si C) Schottky diodes has neg-
Si C Schottklmiygaibx Dliemiruoemvdeorespeerraetcinovgejruyncctuiorrnentet,mhpigehrastuurrgeeocfa1p7a5b°il Cit.y T, haensdea diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features
- AEC-Q101 qualified
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses pared to Si bipolar diodes
Circuit Diagram TO-220-2L
Maximum Ratings Characteristics
Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Power Dissipation Operating Junction...
