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LSIC2SD065A20A - 650V 20A SiC Schottky Barrier Diode

General Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.

Key Features

  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes.

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GEN2 SiC Schottky Diode LSIC2SD065A20A, 650V, 20A, TO-220-2L LSIC2SD065A20A 650 V, 20 A SiC Schottky Barrier Diode RoHS Pb *Image for reference only, for details refer to Dimensions-Package. Circuit Diagram TO-220-2L Case Case 12 1 2 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.