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LSIC2SD065C08A - GEN2 SiC Schottky Diode

General Description

SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, .

Key Features

  • AEC-Q101 qualified.
  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-indepe.

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GEN2 SiC Schottky Diode LSIC2SD065C08A, 650 V, 8 A, TO-252-2L (DPAK) LSIC2SD065C08A 650 V, 8 A SiC Schottky Barrier Diode RoHS Pb Circuit Diagram TO-252-2L (DPAK) Case Case 12 12 Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge Current Power Dissipation Operating Junction Temperature Storage Temperature Soldering Temperature (reflow MSL1) Description This series of silicon carbide (SiC) Schottky diodes has SiC SchottkynaneDdgliagioimbldaexerimevuemrseopreecraotvinegryjucnucrrteionnt,theimghpesruartguerecaopf a1b7i5lit°yC, . These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.