LSIC2SD170B10 Description
LSIC2SD170B10 LSIC2SD170B10 1700 V, 10 A SiC Schottky Barrier Diode Silicon Carbide Schottky Diode Datasheet Agency Approvals and Environmental Environmental Approvals Pinout Diagram Product Summary Characteristic VRRM IF (TC 35 °C) QC (VR: 0-800 V) Value 1700 15 74 Unit V A.
LSIC2SD170B10 Key Features
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent
- Dramatically reduced switching losses pared
- Zero reverse recovery current
LSIC2SD170B10 Applications
- Boost diodes in PFC or DC/DC stages