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LSIC2SD170B10
LSIC2SD170B10 1700 V, 10 A SiC Schottky Barrier Diode
Silicon Carbide Schottky Diode Datasheet
Agency Approvals and Environmental
Environmental Approvals
Pinout Diagram
Product Summary
Characteristic VRRM
IF (TC 35 °C) QC (VR: 0-800 V)
Value 1700
15 74
Unit V A nC
Features
• Positive temperature coefficient for safe operation and ease of paralleling
• 175 °C maximum operating junction temperature • Excellent surge capability • Extremely fast, temperature-independent
switching behavior • Dramatically reduced switching losses compared
to Si bipolar diodes • Zero reverse recovery current
Applications
• Boost diodes in PFC or DC/DC stages • Switch-mode power supplies • Solar inverters • Uninterruptable power supplies • Industrial motor drives • Battery chargers • High spe
LSIC2SD170B10 Datasheet
