SP1007 Overview
Description
The SP1007 diodes are fabricated in a proprietary back-toback silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment.
Key Features
- EFT, IEC 61000-4-4, 40A (5/50ns)
- Low capacitance of 5pF (TYP @ VR=5V)
- Low leakage current of 0.1μA at 5V
