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SP1007 - TVS Diode

General Description

The SP1007 diodes are fabricated in a proprietary back-toback silicon avalanche technology.

These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment.

Key Features

  • ESD, IEC 61000-4-2, ±8kV contact, ±15kV air.
  • EFT, IEC 61000-4-4, 40A (5/50ns).
  • Lightning, 2A (8/20 as defined in IEC 61000-4-5 2nd edition).
  • Low capacitance of 5pF (TYP @ VR=5V).
  • Low leakage current of 0.1μA at 5V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TVS Diode Array (SPA®Diodes) General Purpose ESD Protection - SP1007 Series SP1007 Series 5pF 8kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1007 diodes are fabricated in a proprietary back-toback silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1007 TVS can safely absorb repetitive ESD strikes at the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. The back-toback configuration provides symmetrical ESD protection for data lines when AC signals are present.