Datasheet4U Logo Datasheet4U.com

SP1053 - TVS Diode Arrays

General Description

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD).

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TVS Diode Arrays (SPA®Diodes) General Purpose ESD Protection - SP1053 SP1053 8.5pF 8kV 01005 DFN Plastic Unidirectional Discrete TVS RoHS Pb GREEN Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±8kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely withstand 1.0A surge (8/20 waveshape as defined in IEC 61000-4-5 2nd edition) at a very low clamping voltage.