Description
Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD).
Features
- ESD, IEC 61000-4-2, ±15kV contact, ±20kV air.
- EFT, IEC 61000-4-4, 40A (5/50ns).
- Lightning, IEC 61000-4-5 2nd edition, 2A (tP=8/20μs).
- Low capacitance of 8.5pF (TYP) per I/O.
- Low leakage current of
0.05μA (TYP) at 60V.
- Small form factor μDFN( JEDEC MO-229) package saves board space.
- Lead free and RoHS compliant.
SP1064 Datasheet
