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SP3530 - TVS Diode Arrays

General Description

This SP3530 unidirectional diode is fabricated in a proprietary silicon avalanche technology.

This provides a high level of protection for electronic equipment that may be exposed to electrostatic discharges (ESD).

Key Features

  • ESD, IEC 61000-4-2, ±22kV contact, ±22kV air.
  • EFT, IEC 61000-4-4, 40A (tP=5/50ns).
  • Lightning, IEC 610004-5, 2nd edition, 2.5A (tP=8/20μs).
  • Low capacitance of 0.3pF (TYP) at 3GHz 35.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TVS Diode Arrays (SPA®®Diodes) Enhanced ESD Discrete TVS Series - SP3530 SP3530 0.3pF 22 kV unidirectional TVS diode RoHS Pb GREEN ELV Pinout Bottom View 1 1 1 2 0201 DFN Bottom View 2 2 SOD882 SOD882 12 Description This SP3530 unidirectional diode is fabricated in a proprietary silicon avalanche technology. This provides a high level of protection for electronic equipment that may be exposed to electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (±8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One®, HDMI, USB3.0, USB2.0, and IEEE 1394.