TPSMB1805CA Datasheet | Littelfuse

Description The TPSMB Asymmetrical TPSMBxx05 TVS Diodes protect automotive Si C MOSFET gate driver from overvoltage events. These devices feature asymmetrical reverse standoff voltages, protecting against positive and negative transients with different clamping in a single ponent. They are ideal for safeguarding driving circuits of on-board charger (OBC) and traction inverters in Electric Vehicles (EVs). Maximum Ratings and Thermal Characteristics (TA = 25 OC unless otherwise noted) Parameter Symbol Value Peak Pulse Power Dissipation (IPP x VC) by 10/1000 µs waveform (Fig.1)(Note 1), (Note 2) Power Dissipation on infinite heat sink at TL = 50 OC Operating Junction Temperature Range PPPM1 PPPM2 PM(AV) 600 5.0 -65 to 175 Storage Temperature Range TSTG -65 to 175 Notes: 1. Non-repetitive current pulse, per Fig.4 and derated above TA = 25 ºC per Fig. 3. 2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0 mm) to each terminal. Unit W °C °C Applications - Gate driver protection of Si C MOSFET - On-board charger (OBC) - Traction inverters Features & Benefits - High-reliability application and - Glass passivated chip junction automotive grade AEC-Q101 - Fast response time: typically qualified less than 1.0 ns from 0 V to - 600 W PPPM peak pulse power VBR min capability at 10/1000 µs - Excellent clamping capability waveform, repetition rate (duty cycles):0.01 % - Low incremental surge resistance - Surface mount ponent to optimize board space - UL Recognized pound meeting flammability rating V-0 - Low profile package - Meets MSL Level 1 per - Typical failure mode is short J-STD-020, high temperature from over-specified voltage or soldering guaranteed: 260 current ºC/10 seconds at terminals - Whisker test is conducted based on JEDEC JESD201A per tables 4a and 4c - Matte tin lead- free plated - Halogen-free and Ro HSpliant - ESD protection of data lines in accordance with IEC...