TPSMB2005CA Description
The TPSMB Asymmetrical TPSMBxx05 TVS Diodes protect automotive SiC MOSFET gate driver from overvoltage events.
TPSMB2005CA Key Features
- High-reliability application and
- Glass passivated chip junction
- Fast response time: typically
- 600 W PPPM peak pulse power
- Excellent clamping capability
- Low incremental surge
- Surface mount ponent to optimize board space
- UL Recognized pound
- Low profile package
- Typical failure mode is short
TPSMB2005CA Applications
- Gate driver protection of SiC MOSFET