Lonten LSD07N70
The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.| Part No. | LSD07N70 |
|---|---|
| Datasheet | LSD07N70 Download |
| Manufacturer | Lonten |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
LonFETTM Power MOSFET is fabricated using advanced super junction technology. Product Summary VDS @ Tj,max 750V RDS(on),max 0.57Ω IDM 21A Qg,typ 19nCFEATURES
● Ultra low Rdson● Ultra low gate charge (typ. Qg = 19nC)
● 100% UIS tested
● RoHS compliant
APPLICATIONS
● Power faction correction (PFC).● Switched mode power supplies (SMPS).
● Uninterruptible power supply (UPS). TO-251 TO-252 TO-220 TO-220F D G S N-Channel MOSFET Pb
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGSS EAS EAR IAR PD TJ, TSTG IS IS,pulse Value 700 7 4.4 21 ±30 230 0.5 7 83 0.67 -55 to +150 7 21 Unit V A A A V mJ mJ A W W/°C °C A A Ver...
