LSG07N70 Overview
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 750V RDS(on),max 0.57Ω IDM 21A Qg,typ 19nC.
LSG07N70 Key Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg = 19nC)
- 100% UIS tested
- RoHS pliant