LD1014D Datasheet | Lovoltech

Features ™ Superior gate charge x Rdson product (FOM) ™ Trench Power JFET with low threshold voltage Vth. ™ Device fully “ON” with Vgs = 0.7V ™ Optimum for “Low Side” Buck Converters ™ Excellent for high frequency dc/dc converters .. ™ Optimized for Secondary Rectification in isolated DC-DC ™ Low Rg and low Cds for high speed switching Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required. This product has tin plated leads. Applications ™ ™ ™ ™ ™ ™ DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules DPAK Lead-free Pin Assignments - Channel Power JFET with PN Diode Pin Definitions Pin Number 1 2 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 24V Product Summary Rdson (Ω) 0.0065 ID (A) 501 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 6VDC, IL=60APK, L=0.3m H, RG=100 Ω) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25°C) Symbol VDS VGS VGD ID ID EAS TJ TSTG T PD Ratings 24 -12 -28 501 100 200 -55 to 150°C -65 to 150°C 260°C 69 Units V V V A A m J °C °C °C W LD1014D Rev 1.05 03-05 Thermal Resistance Symbol RΘJA RΘJC Parameter Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case DPAK Ratings 90 1.8 Units °C/W °C/W (TA = +25°C, unless...