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LPM2302 Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Low Power Semi

Overview: Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor.

Datasheet Details

Part number LPM2302
Manufacturer Low Power Semi
File Size 221.00 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet LPM2302-LowPowerSemi.pdf

General Description

The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for low voltage applications, notebook puter power management and other battery powered circuits where high-side switching are needed.

Key Features

  • 20V/3.5A, RDS(ON)=50mΩ(Typ. )@VGS=4.5V.
  • 20V/3.0A, RDS(ON)=75mΩ(Typ. )@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

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