LPM2302 Datasheet | Low Power Semi

Description The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook puter power management and other battery powered circuits where high-side switching are needed. Ordering Information LPM2302- - - - F: Pb-Free Package Type B3: SOT23-3 Features - 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V - 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V - Super high density cell design for extremely low RDS(ON) - SOT23 Package Applications - Portable Media Players - Cellular and Smart mobile phone - LCD - DSC Sensor - Wireless Card  Marking Information Device Marking LPM2302B3F A2s HB Package SOT23-3 Shipping 3K/REEL Pin...