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LPM2302 - N-Channel Enhancement Mode Field Effect Transistor

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LPM2302 N-Channel Enhancement Mode Field Effect Transistor by Low Power Semi - Datasheet Preview — Datasheet preview – LPM2302

Datasheet Details

Part number	LPM2302
Manufacturer	Low Power Semi
File Size	221.00 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	LPM2302 Datasheet
Additional preview pages of the LPM2302 datasheet.

LPM2302 Product details

Description

The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

20V/3.5A, RDS(ON)=50mΩ(Typ. )@VGS=4.5V.
20V/3.0A, RDS(ON)=75mΩ(Typ. )@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
SOT23 Package.

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Published: Jun 10, 2019 |