MMS9014 Datasheet PDF

FEATURES

● SOT-23 Plastic-Encapsulate Transistors
● Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.
● Collector-current 0.1A
● Collector-base Voltage 50V
● Operating and storage junction temperature range: -55OC to +150OC
● Marking Code: J6 NPN Silicon Plastic-Encapsulate Transistor

ELECTRICAL CHARACTERISTICS

@ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) ICBO Collector Cutoff Current (VCB=50Vdc, IE=0) ICEO Collector Cutoff Current (VCE=35Vdc, IB=0) IEBO Emitter Cutoff Current (VEB=3.0Vdc, IC=0) ON CHARACTERISTICS 50 --- Vdc 45 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc hFE(1) DC Current Gain (IC=1.0mAdc, VCE=5.0V