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MP4T243 - Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors

This page provides the datasheet information for the MP4T243, a member of the MP4T243_M Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors family.

Datasheet Summary

Description

The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB.

Features

  • Low Phase Noise Oscillator Transistor.
  • 200 mW Driv er Amplifier Transistor.
  • Operation to 8 GHz.
  • Av ailable as Chip.
  • Av ailable in Hermetic Surface Mount Packages.

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Datasheet preview – MP4T243

Datasheet Details

Part number MP4T243
Manufacturer M-pulse Microwave
File Size 118.33 KB
Description Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
Datasheet download datasheet MP4T243 Datasheet
Additional preview pages of the MP4T243 datasheet.

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Full PDF Text Transcription

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Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages Description The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB. This industry standard transistor is av ailable as a chip for hybrid oscillator circuits or in hermetic ceramic packages for military usage. The chip and hermetic packages may be screened to JANTXV equiv alent lev els. The MP4T243 transistors utilize sub-micron photolithography and locos oxidation techniques to minimize parasitic capacitances.
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