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MP4T243 - Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors

Download the MP4T243 datasheet PDF. This datasheet also covers the MP4T243_M variant, as both devices belong to the same silicon bipolar high ft low noise medium power 12 volt transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB.

Key Features

  • Low Phase Noise Oscillator Transistor.
  • 200 mW Driv er Amplifier Transistor.
  • Operation to 8 GHz.
  • Av ailable as Chip.
  • Av ailable in Hermetic Surface Mount Packages.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MP4T243_M-pulseMicrowave.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MP4T243
Manufacturer M-pulse Microwave
File Size 118.33 KB
Description Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors
Datasheet download datasheet MP4T243 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages Description The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB. This industry standard transistor is av ailable as a chip for hybrid oscillator circuits or in hermetic ceramic packages for military usage. The chip and hermetic packages may be screened to JANTXV equiv alent lev els. The MP4T243 transistors utilize sub-micron photolithography and locos oxidation techniques to minimize parasitic capacitances.