M-pulse Microwave MP4T856
The MP4T856 series of moderate power NPN transistors prov ides low noise at 5-10 v olts operating v oltage. These transistors are designed to optimize gain at moderate collector currents (20 - 60 mA). They are useful as moderate power (+23-24 dBm) low noise amplifiers at 0.5-2 GHz or as low noise VCO transistors from 100 MHz to 5.0 GHz.| Part No. | MP4T856 |
|---|---|
| Datasheet | MP4T856 Download |
| Manufacturer | M-pulse Microwave |
| Description | Moderate Power High fT NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
●High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz●High Gain Bandwidth Product
●8-9 GHz fT
●High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz
●Low Noise Figure - 1.5 dB @ 1.5 GHz
DESCRIPTION
These inexpensiv e transistors are av ailable in the SOT23 (MP4T85633), the SOT-143 (MP4T85639), and the Micro-X (MP4T85635) packages. They are also av ailable as chips (MP4T85600) for hybrid circuits. The plastic packages SOT-23 and SOT-143 are normally supplied on tape and reel. Package Outline MP4T856 Series SOT-23 SOT-143 Chip Absolute Maximum Ratings1 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Chip or Ceramic Package Plastic Package Storage Temperature Chip or Ceramic Package Plastic Package Power Dissipation (die) 1. See power derating curves. Absolute Maximum 20 V 12 V 3.0 V 100 mA +200°C +150°C -65°C to +200°C -65°C to +200°C 1200 mW1 Specification Subject to Change Without Not...
