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MP4TD0300 - Silicon Bipolar MMIC Cascadable Amplifier

Download the MP4TD0300 datasheet PDF. This datasheet also covers the MP4TD0300_M variant, as both devices belong to the same silicon bipolar mmic cascadable amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

M-Pulse's MP4TD0300 is a high performance silicon bipolar MMIC chip.

The MP4TD0300 is designed for use where a general purpose 50Ω gain block is required.

Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.

Key Features

  • Cascadable 50Ω Gain Block.
  • 3dB Bandwidth: DC to 2.0 GHz.
  • 12 dB Typical Gain @ 1.0 GHz.
  • Unconditionally Stable (k>1) Chip Outline Drawing1,2,3,4 RF Input Optional +12 Volt Optional +15 Volt MP4TD0300 V4.00.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MP4TD0300_M-pulseMicrowave.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MP4TD0300
Manufacturer M-pulse Microwave
File Size 154.92 KB
Description Silicon Bipolar MMIC Cascadable Amplifier
Datasheet download datasheet MP4TD0300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 2.0 GHz • 12 dB Typical Gain @ 1.0 GHz • Unconditionally Stable (k>1) Chip Outline Drawing1,2,3,4 RF Input Optional +12 Volt Optional +15 Volt MP4TD0300 V4.00 Description M-Pulse's MP4TD0300 is a high performance silicon bipolar MMIC chip. The MP4TD0300 is designed for use where a general purpose 50Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD0300 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. Ground Optional RF Output & + 5 Volts* 375 µ (14.8 mil) 375 µ (14.