Datasheet4U Logo Datasheet4U.com

MP4TD1100 - Silicon Bipolar MMIC Cascadable Amplifier

Download the MP4TD1100 datasheet PDF. This datasheet also covers the MP4TD1100_M variant, as both devices belong to the same silicon bipolar mmic cascadable amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

M-Pulse's MP4TD1100 is a high performance silicon bipolar MMIC chip.

The MP4TD1100 is designed for use in 50Ω or 75Ω systems where a high dynamic range gain block is required.

Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.

Key Features

  • High Dynamic Range Cascadable 50Ω/75Ω Gain Block.
  • 3dB Bandwidth: 50 MHz to 1.0 GHz.
  • 17.5 dBm Typical P1dB @ 0.7 Ghz.
  • 11 dB Typical Gain @ 0.5 GHz.
  • 3.5 dB Typical Noise Figure @ 1.0 GHz RF Input MP4TD1100 Chip Outline Drawing1,2,3,4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MP4TD1100_M-pulseMicrowave.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MP4TD1100
Manufacturer M-pulse Microwave
File Size 172.34 KB
Description Silicon Bipolar MMIC Cascadable Amplifier
Datasheet download datasheet MP4TD1100 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • High Dynamic Range Cascadable 50Ω/75Ω Gain Block • 3dB Bandwidth: 50 MHz to 1.0 GHz • 17.5 dBm Typical P1dB @ 0.7 Ghz • 11 dB Typical Gain @ 0.5 GHz • 3.5 dB Typical Noise Figure @ 1.0 GHz RF Input MP4TD1100 Chip Outline Drawing1,2,3,4 Description M-Pulse's MP4TD1100 is a high performance silicon bipolar MMIC chip. The MP4TD1100 is designed for use in 50Ω or 75Ω systems where a high dynamic range gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD1100 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.