TBS6416B4E - 1M x 16 Bit x 4 Bank Synchronous DRAM

This page provides the datasheet information for the TBS6416B4E, a member of the TBS6416B4E_M 1M x 16 Bit x 4 Bank Synchronous DRAM family.

Product Overview

📥 Download Datasheet

TBS6416B4E 1M x 16 Bit x 4 Bank Synchronous DRAM by M-tec - Datasheet Preview — Datasheet preview – TBS6416B4E

Datasheet Details

Part number	TBS6416B4E
Manufacturer	M-tec
File Size	111.94 KB
Description	1M x 16 Bit x 4 Bank Synchronous DRAM
Datasheet	TBS6416B4E Datasheet
Additional preview pages of the TBS6416B4E datasheet.

TBS6416B4E Product details

Description

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four-banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

📁 Similar Datasheet

TBS606 - Standard Bridge Rectifier (Taiwan Semiconductor)
TBS608 - Standard Bridge Rectifier (Taiwan Semiconductor)
TBS610 - Standard Bridge Rectifier (Taiwan Semiconductor)
TBS30A - Single Phase Glass Passivated Bridge Rectifier (MCC)
TBS30B - Single Phase Glass Passivated Bridge Rectifier (MCC)
TBS30D - Single Phase Glass Passivated Bridge Rectifier (MCC)
TBS30G - Single Phase Glass Passivated Bridge Rectifier (MCC)
TBS30J - Single Phase Glass Passivated Bridge Rectifier (MCC)
TBS30K - Single Phase Glass Passivated Bridge Rectifier (MCC)
TBS30M - Single Phase Glass Passivated Bridge Rectifier (MCC)

Other Datasheets by M-tec

TBS6416B4E - 1M x 16-Bit x 4-Banks SDRAM

Published: Jun 18, 2005 |