TBS6416B4E - 1M x 16 Bit x 4 Bank Synchronous DRAM

Product Overview

Datasheet Details

Part number	TBS6416B4E
Manufacturer	M-tec
File Size	111.94 KB
Description	1M x 16 Bit x 4 Bank Synchronous DRAM
Datasheet	TBS6416B4E Datasheet
Note	This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M. Please refer to the document for exact specifications by model.
Additional preview pages of the TBS6416B4E datasheet.

Product details

Description

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four-banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

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Other Datasheets by M-tec

TBS6416B4E - 1M x 16-Bit x 4-Banks SDRAM

Published: Jun 18, 2005 |