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MAPRST0002
Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
Features
• • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
M/A-COM Products Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature
Symbol
VCES VEBO IC PTOT TSTG TJ
Rating
70 3.0 3.