Datasheet4U Logo Datasheet4U.com

MAPRST0002 - Radar Pulsed Power Transistor

Download the MAPRST0002 datasheet PDF. This datasheet also covers the MAPRST0002-MA variant, as both devices belong to the same radar pulsed power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant M/A-COM Products Released, 30 May 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAPRST0002-MA-COMTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MAPRST0002
Manufacturer MA-COM Technology
File Size 108.74 KB
Description Radar Pulsed Power Transistor
Datasheet download datasheet MAPRST0002 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR Tyco Electronics
MAPRST0912-50 AVIONICS PULSED POWER TRANSISTOR Tyco Electronics
MAPRST1030-1KS Avionics Pulsed RF Power Transistor Tyco Electronics
MAPRST1214-030UF RADAR PULSED POWER TRANSISTOR Tyco Electronics
MAPRST1214-150UF RADAR PULSED POWER TRANSISTOR Tyco Electronics

Other Datasheets by MA-COM Technology

Part Number Description
MAPDCC0017 Low Cost Six-Way SMT Power Divider
MAPDCC0018 Low Cost Six-Way Power Splitter/Combiner
MAPDCC0019 Low Cost Six-Way Power Divider
MAPDCC0020 Low Cost Six-Way SMT Power Divider
MAPDCC0021 Low Cost Eight-Way GMIC SMT Power Divider

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAPRST0002 Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant M/A-COM Products Released, 30 May 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 70 3.0 3.