1N3600 - Silicon Switching Diode

This page provides the datasheet information for the 1N3600, a member of the 1N3600-MA Silicon Switching Diode family.

Product Overview

MA-COM

Part number	1N3600
Manufacturer	MA-COM
File Size	597.42 KB
Description	Silicon Switching Diode
Datasheet	1N3600 Datasheet
Additional preview pages of the 1N3600 datasheet.

Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231.
Metallurgically Bonded.
Hermetically Sealed.
Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) TYPE # VBR IR = 10 μA VRWM 1.

1N3600 - SWITCHING RECTIFIERS (Digitron Semiconductors)
1N3600 - Switching Diodes (Microsemi)
1N3600 - High Conductance Ultra Fast Diode (NTE)
1N3600UR - SWITCHING DIODE (Compensated Deuices Incorporated)
1N3600UR - SWITCHING DIODE (Microsemi Corporation)
1N3604 - (1N3xxx) Silicon Diodes (Central)
1N3605 - Silicon Diodes (Central)
1N3611 - Glass Passivated Rectifiers (Vishay)
1N3611 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
1N3611 - (1N3611 - 1N3957) VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLAS RECTIFIERS (Microsemi Corporation)

Other Datasheets by MA-COM

Published: Jun 12, 2017 |