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1N914 - Silicon Switching Diode

Download the 1N914 datasheet PDF. This datasheet also covers the 1N914-MA variant, as both devices belong to the same silicon switching diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +200°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.00 A, sinewave, Pw = 8.3 ms Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) JEDEC TYPE# 1N914 VBR @ 100 A VRWM IO Volts Volts (pk) mA Vf1 IF = 10 mA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N914-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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1N914 Small Signal Fast Switching Diodes Vishay
1N914 Small Signal Diode ON Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N914 & 1N4148-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +200°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.00 A, sinewave, Pw = 8.3 ms Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) JEDEC TYPE# 1N914 VBR @ 100 A VRWM IO Volts Volts (pk) mA Vf1 IF = 10 mA Vdc 100 75 75 0.8 Vf2 IF = 50 mA Trr 1 Vdc nsec 1.2 5 IR1 @ 20 Vdc nA 25 IR2 @ 75 Vdc IR3 @ 20 Vdc TA =150°C IR4 @ 75 Vdc TA =150°C Capacitance Capacitance @0V @1.5 V A A A pF pF 0.5 35 75 4.0 2.8 1N4148-1 100 75 200 0.8 1.2 5 35 0.