Datasheet4U Logo Datasheet4U.com

2N3055 - NPN Power Silicon Transistor

Download the 2N3055 datasheet PDF. This datasheet also covers the 2N3055-MA variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF19500/407.
  • TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics Test Conditions Symbol Units IC = 200 mAdc IC = 200 mAdc, RBE = 100 Ω VBE = -1.5 Vdc, IC =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3055-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics
2N3055 NPN POWER SILICON TRANSISTOR Microsemi Corporation
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS CENTRAL SEMICONDUCTOR
2N3055 NPN Power Silicon Transistor VPT
2N3055 Silicon NPN Power Transistors SavantIC

Other Datasheets by MACOM Technology Solutions

Part Number Description
2N3057A NPN Low Power Silicon Transistor
2N3418 NPN Medium Power Silicon Transistor
2N3418S NPN Medium Power Silicon Transistor
2N3419 NPN Medium Power Silicon Transistor
2N3419S NPN Medium Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3055 NPN Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/407  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics Test Conditions Symbol Units IC = 200 mAdc IC = 200 mAdc, RBE = 100 Ω VBE = -1.5 Vdc, IC = 200 mAdc VCE = 60 Vdc VBE = = -1.5 Vdc, VCE = 100 Vdc VEB = 7.0 Vdc V(BR)CEO V(BR)CER V(BR)CEX Vdc ICEO ICEX mAdc IEBO mAdc IC = 0.5 Adc, VCE = 4.0 Vdc IC = 4.0 Adc, VCE = 4.0 Vdc IC = 10.0 Adc, VCE = 4.0 Vdc IC = 4.0 Adc, IB = 0.4 Adc IC = 10.