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2N6193U3 - NPN Power Silicon Transistor

Download the 2N6193U3 datasheet PDF. This datasheet also covers the 2N6193U3-MA variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • JANS and JANSR Qualified to MIL-PRF-19500/561.
  • JEDEC Registered 2N6193.
  • Lightweight & Low Power.
  • Ideal for Space, Military, and Other High Reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6193U3-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6193U3 NPN Power Silicon Transistor Features  JANS and JANSR Qualified to MIL-PRF-19500/561  JEDEC Registered 2N6193  Lightweight & Low Power  Ideal for Space, Military, and Other High Reliability Applications  Surface Mount U3 (TO-276AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current IC = 50 mAdc VCE = 100 Vdc VCE = 90 Vdc, VBE = 1.5 Vdc V(BR)CEO Vdc ICEO ICEX µAdc Collector - Base Cutoff Current VCB = 100 Vdc ICBO µAdc Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics VEB = 6.0 Vdc IC = 0.5 Adc, VCE = 2.