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DU2810S
RF Power MOSFET Transistor 10 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Low noise floor RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 2.8 35 200 -65 to +150 2
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz) 30
ZIN (Ω) 20 - j11.0
ZLOAD (Ω) 23.0 + j3.0
50
24.0 - j15.0
19.0 +j5.0
100
18.0 - j18.0
14.0 + j6.0
200
12.0—j19.0
9.0 + j5.0
VDD = 28V, IDQ = 100mA, POUT = 10.
DU2810S Datasheet
